00992nam a2200217 k 4500001001500000005001500015008004100030040001900071041001300090049003200103052002400135056001300159082001500172100004500187245024100232260003600473300003100509502009900540653009500639963004000734KDM199827862  20180904110455981201s1998    gbka       SG 000   kor    a011001c0110010 akorbeng0 lEM1730933lEM1730934c2fDP01a421.7b이711ㅇㅇ  a421.7240 a530.412211 a이철욱,g李哲旭0KAC2018D30254aut10aAlGaAs/InGaAs/GaAs PHEMT 구조의 특성 및 ECR 플라즈마에 의한 게이트 리세스 식각 공정 연구=x(A)study of structural properties and gate recess etching process by ECR plasma for AlGaAs/InGaAs/GaAs PHEMT/d李哲旭  a경산:b嶺南大學校,c1998  aiii,147장:b삽도;c26cm1 a학위논문(박사) --b영남대학교 대학원:c물리학과 고체물리학전공,d1998  aALGAASaINGAASaGAASaPHEMTaECRa플라즈마a게이트a리세스aGATEaRECESSaPLASMA  a물리학과a고체물리학전공