01065nam a2200229 c 4500001001500000005001500015008004100030040001900071041001300090049003200103052002200135056001400157082001600171100003600187245019000223260004200413300003600455502007600491653016100567940008700728963002000815KDM199427944  19941212141531941212s1994    tjkaf      CB 000   kor    a011001c0110010 akorbeng0 lEM1178342lEM1178343c2fDP01a530.48b문582ㅍ  a530.48230 a620.1932191 a문대규,d1965-0KAC20170479910aPECVD 법에 의한 μC-Si:H 박막의 성장과 a-Si 박막의 고상결정화=xGrowth of μC-Si:H films and solid phase recrystallization of a-Si films deposited by PECVD/d문대규  a대전:b한국과학기술원,c1994  av,105장:b삽도,도판;c26cm1 a학위논문(박사) --b한국과학기술원:c재료공학과,d1994  aPECVDa법aμCSIHa박막aASIa고상결정화aGROWTHaFILMSaSOLIDaPHASEaRECRYSTALLIZATIONaDEPOSITEDa피이시브이디a뮤시에스아이에이치0 a피이시브이디 법에 의한 뮤시-에스아이:에이치 박막의 성장...  a재료공학과