01083nam a2200229 k 4500001001500000005001500015008004100030040001900071041001300090049003200103052002200135056001400157082001800171100004800189245021400237260003600451300003600487502008100523653015000604740007600754963002300830KDM199326550  20200901161149940901s1993    ulkaf      AG 000   kor    a011001c0110010 akorbeng0 lEM1031182lEM1031183c2fDP01a530.43b유459ㅍ  a530.43230 a620.189342191 a홍종성,g洪鍾聲,d1960-0KAC20172601800a플라즈마 화학 증착법으로 형성한 W/Si 및 W/GaAs의 급속 열처리 효과=xRapid thermal annealing effects of the W/Si and W/GaAs by plasma enhanced chemical vapor deposition method/d홍종성  a서울:b동국대학교,c1993  axi,157p.:b삽도,도판;c26cm1 a학위논문(박사) --b동국대학교 대학원:cDept. of Physics,d1993  a플라즈마a화학증착법aW/SIaW/GAASa열처리aRAPIDaTHERMALaANNEALINGaEFFECTSaPLASMAaENHANCEDaCHEMICALaVAPORaDEPOSITIONaMETHOD0 a플라즈마 화학 증착법으로 형성한 더블유/에스아이...  aDept.aofaPhysics