01200nam a2200253 k 4500001001500000005001500015008004100030040001900071041001300090049003200103052002200135056001400157082001800171100004800189245025800237260003600495300003100531502010900562653015100671900002600822950002100848963005100869965002600920KDM199314580  20210927144314940216s1992    hcka       MB 000   kor    a011001c0110010 akorbeng0 lEM1008723lEM1008724c2fDP01a569.91b구113ㄱ  a569.91230 a621.381732191 a구경완,g丘庚完,d1961-0KAC20163715310a高集積 記憶素子用 積層 커패시터 絶緣薄膜 SiO₂/Si₃N₄의 形成 및 特性에 關한 硏究=x(A)study on formation and characterization of stacked capacitor dielectric thin film (SiO₂/Si₃N₄) for high density DRAM/d丘庚完  a대전:b忠南大學校,c1992  avii,110장:b삽도;c26cm1 a학위논문(박사) --b충남대학교 대학원:c전자공학과 반도체 재료공학전공,d1992  a고집적a기억소자용a적층a커패시터a절연박막aSIO₂aSI₃N₄aSTACKEDaCAPACITORaDIELECTRICaTHINaFILMaHIGHaDENSITYaDRAM10aGu, Gyeongwan,d1961-1 a비매품b\5800  a전자공학과a반도체a재료공학전공  a반도체소자제작