01092nam a2200265 k 4500001001500000005001500015008004100030040001900071041001300090049001700103052002100120056001300141082001800154100004800172245012200220260007100342300003400413500008400447502008700531653010900618900002500727950002100752963003300773965002000806KDM199311928  20200731091816931106s1992    ulka       CB 000   eng    a011001c0110010 aengbkor0 lWM162478fDP02a621.38171bK499c  a569.8230 a621.381712191 a김용태,g金龍泰,d1954-0KAC20183813110aCharacteristics of low-resistive plasma enhanced chemical vapor deposited Tungsten(PECVD-W) thin films/dYong Tae Kim  a서울:bKorea advanced institute of science and technology,c1992  av,166 p.:bill.,plates;c26cm  a한글서명 : 플라즈마 화학증착된 저저항 텅스텐박막의 특성1 a학위논문(박사) --b한국과학기술원:c전기 및 전자공학과,d1992  aCHARACTERISTICSaLOWRESISTIVEaPLASMAaENHANCEDaCHEMICALaVAPORaDEPOSITEDaTUNGSTENPECVDWaTHINaFILMS10aKim, Yongtae,d1954-1 a비매품b\7500  a전기a및a전자공학과  a텅스텐박막