01027nam a2200253 k 4500001001500000005001500015008004100030040001900071041001300090049003000103052002100133056001300154082001500167100004800182245017600230260003600406300002900442502007700471653012900548900002400677950002100701963001700722965003400739KDM198815319  20200803143721890417s1988    ulka       AC 000   kor    a011001c0110010 akorbeng0 lEM652180lEM683031c2fDP01a421.7b김736ㅈ  a421.7230 a530.412191 a김은규,g金銀奎,d1957-0KAC20174387710a접합과도용량 분광법을 이용한 HB-GaAs내의 깊은준위 연구=xStudy of deep levels in HB-GaAs using junction capacitance transient spectroscopy/d金銀奎  a서울:b高麗大學校,c1988  axi,131p.:b삽도;c26cm1 a학위논문(박사) --b高麗大學校 大學院:c物理學科,d1988  a접합과도용량a분광법aHBGAAS내a깊은준위aDEEPaLEVELSaHBGAASaJUNCTIONaCAPACITANCEaTRANSIENTaSPECTROSCOPY10aKim, Eunkyu,d1957-1 a비매품b\4400  a물리학과  a고체물성물리x분광법