00947nam a2200253 k 4500001001500000005001500015008004100030040001900071041001300090049004300103052002100146056001300167082001800180100004800198245013900246260003300385300003600418502008300454653006400537900002500601950002100626963002600647965002000673KDM198810537  20200916161425881129s1987    ulkaf      BD 000   kor    a011001c0110010 akorbeng0 lEM623144lEM623145c2lEM651802c3fDP01a569.8b김561ㅌ  a569.8230 a621.381712191 a김선태,g金善泰,d1956-0KAC20182340210aTGS법으로 성장된 In1-xGaxP의 특성에 관한 연구=xStudy on the properties of In1-xGaxP grown by the TGS method/d김선태  a서울:b광운대학,c1987  axiv,97p.:b삽도,도판;c26cm1 a학위논문(박사) --b광운대학 대학원:c전자재료공학과,d1987  aTGS법a성장된aIN1XGAXPaPROPERTIESaGROWNaTGSaMETHOD10aKim, Seontai,d1956-1 a비매품b\3900  a전자재료공학과  a광전자소자