00981nam a2200253 c 4500001001500000005001500015008004100030040001900071041001300090049001700103052002100120056001300141082001800154100004800172245007900220260003600299300002500335502010000360653010500460740008700565950002100652963004000673965001400713KDM198605013  19941012185213860827s1985    gbka       SC 000   kor    a011001c0110010 akorbeng0 lEM529374fDM01a569.8b권575ㅂ  a569.8230 a621.381522191 a권상직,g權相直,d1959-0KAC20170179510aBF+2이온이 注入된 실리콘 웨이퍼의 어닐링효과/d權相直  a대구:b慶北大學校,c1985  a37p.:b삽도;c26cm0 a학위논문(석사) --b慶北大學校 大學院:c電子工學科 電子物性專攻,d1985   aBF2이온a주입된a실리콘a웨이퍼a어닐링효a비에프a프러스a이이온a어닐링0 a비에프 프러스 이이온이 주입된 실리콘 웨이퍼의 어닐링 효과0 a비매품b\2300  a전자공학과a전자물성전공  a반도체