00975nam a2200229 k 4500001001300000005001500013008004100028041001300069049003200082052001600114056001400130082001600144245019200160260003600352300003200388502007700420650004000497650004000537653010700577700005300684890000800737KDM20042406720180831093050040614s2004    ulka       ABb000   kor  0 akorbeng0 lEM3057621lEM3057622c2fDP01a427.62b4-7  a427.62240 a537.62222100aMBE에 의한 In Ga₁  As/GaAs 및 In Ga₁  N/GaN 양자점 성장과 특성연구=xGrowth and characterization of In Ga₁  As/GaAs and In Ga₁  N/GaN quantum dots by MBE/d이상준  a서울:b경희대학교,c2004  avii, 128장:b삽도;c26cm1 a학위논문(박사) --b경희대학교 대학원:c물리학과,d2004 8a반도체[半導體]0KSH1998000581 8a양자점[量子點]0KSH2002030050  aMBEa양자점 성장a물리학a저차원 반도체a반도체a분자선 에피택시aINASaINGAAS1 a이상준,g李尙峻,d1971-0KAC2017323834aut  h245