01420nam a2200289 c 4500001001300000005001500013008004100028040001100069041001300080052003100093245019400124300002200318545009000340545009000430545009000520545010900610653007000719700001900789700001400808700004800822700004800870773014000918900001701058900001801075900001801093900001901111KSI00090920920140207155406130802s2013    ulk           000   kor    a0110010 akorbeng01a560.5b한597ㅈㄹc17(1)00aAlGaN/GaN HEMT의 채널폭 스케일링에 따른 협폭효과 =xNarrow channel effect on the electrical characteristics of AlGaN/GaN HEMT /d임진홍,e김정진,e심규환,e양전욱  ap. 71-76 ;c26 cm  a임진홍, Dept. of Semiconductor Science and Technology, Chonbuk National University  a김정진, Dept. of Semiconductor Science and Technology, Chonbuk National University  a심규환, Dept. of Semiconductor Science and Technology, Chonbuk National University  a양전욱, Dept. of Semiconductor Science and Technology, Chonbuk National Universitybjwyang@jbnu.ac.kr  aAlGaN/GaNaHEMTaChannelaNarrow widthaThreshold voltageaStrain1 a임진홍4aut1 a김정진1 a심규환,g沈揆煥,d1961-0KAC2017060791 a양전욱,g楊典旭,d1958-0KAC2017066150 t전기전자학회 논문지.d한국전기전자학회.g17권 1호(2013년 3월), p. 71-76q17:1<71w(011001)KSE199900595,x1226-724410aLim, Jinhong10aKim, Jeongjin10aShim, Kyuhwan10aYang, Jeonwook