01293na  a2200277   4500001001300000005001500013007000300028008004100031040001100072041001300083052002800096245022800124300002600352545008400378545009800462545007500560653009300635700001900728700001400747700004800761773013300809856002100942900001600963900001900979900001700998KSI00080581220100612195537ta100504s2007    ulk           000   kor    a0110010 akorbeng01a560.5b대483ㄱc56(9)00aS-RCAT (spherical recess cell allay transistor) 구조에 따른 FN stress 특성 열화에 관한 연구 =x(The)research of FN stress property degradation according to S-RCAT structure /d李東仁,e李成泳,e盧用翰  ap. 1614-1618 ;c30 cm  a이동인, 정회원, 삼성전자 메모리 사업부bDdong71.lee@samsung.com  a이성영, 정회원, 성균관대 전기전자컴퓨터공학과 교수bAFC.LEE@samsung.com  a노용한, 정회원, 삼성전자 메모리 사업부byhroh@skku.edu  aFN stress 특성 열화aDRAMaS-RCATaFN stressaDegradationaDual poly gateaOxidation1 a이동인4aut1 a이성영1 a노용한,g盧用翰,d1958-0KAC2016368450 t전기학회논문지.d대한전기학회.g56卷 9號(2007년 9월), p. 1614-1618q56:9<1614w(011001)KSE199508722,x1975-835940u76615454aKd00010aLee, Dongin10aLee, Sungyoung10aRoh, Yonghan