01226nam a2200301 c 4500001001300000005001500013007000300028008004100031040001100072041001300083052003000096245018800126300002600314545004700340545004700387545002800434545002800462653010200490700005300592700004800645700001400693700001400707773013400721900001700855900001700872900001800889900001700907KSI00076296820091005100609ta090616s1996    ulk           000   kor    a0110010 akorbeng01a530.405b한596ㅎc6(10)00aCu/CoSi₂ 및 Cu/Co-Ti 이중층 실리사이드의 계면반응 =xInterfacial reactions of Cu/CoSi₂ and Cu/Co-Ti bilayer silicide /d이종무,e이병욱,e김영욱,e이수천  ap. 1192-1198 ;c30 cm  a이종무, 인하대학교 금속공학과  a이병욱, 인하대학교 금속공학과  a김영욱, 삼성전자  a이수천, 삼성전자  aCu/Co-Ti 이중층 실리사이드a계면반응aCu/CoSi2 bilayer silicideaInterfacial reaction1 a이종무,g李鍾武,d1950-0KAC2018193314aut1 a이병욱,g李秉昱,d1960-0KAC2018453561 a김영욱1 a이수천0 t한국재료학회지.d韓國材料學會.g6권 12호(1996년 12월), p. 1192-1198q6:12<1192w(011001)KSE199509224,x1225-056210aLee, Chongmu10aLee, Byonguk10aKim, Youngwuk10aLee, Soochun