01140nam a2200229 c 4500001001300000005001500013008004100028040001100069041001300080052003900093245024300132300002300375545005600398545008600454653008800540700001900628700004800647773015600695856002100851900001900872900001900891KSI00054380120080423101214060729s2004    ulk           000   kor    a0110010 akorbeng01a569.205b한597ㅈㄱc17(1)-17(4)00a비대칭 마그네트론 스퍼터링법으로 성장된 a-C:H 의 물리적 특성=xCharacteristics of hydrogenated amorphous carbon (a-C:H) thin films grown by close field unbalanced magnetron sputtering method/d박용섭,e홍병유  ap. 278-282;c26 cm  a박용섭, 성균관대학교 정보통신공학부  a홍병유, 플라즈마 응용 표면기술 연구센타bbyhong@yurim.skku.ac.kr  aa-C:HaCFUBM sputteringaRamenaHardnessa비대칭 마그네트론 스퍼터링법1 a박용섭4aut1 a홍병유,g洪秉裕,d1960-0KAC2017044750 t전기전자재료학회 논문지.d한국전기전자재료학회.gVol.17 no.3(2004년 3월), p. 278-282q17:3<278w(011001)KSE199800338,x1226-794540u40042128aKd00010aPark, Yongseob10aHong, Byungyou