01651nam a2200337 c 4500001001300000005001500013008004100028040001100069041001300080052003900093245020800132300002300340545005300363545005300416545005000469545005300519545005300572653026700625700003300892700002800925700003400953700001400987700004801001773015601049856002101205900001701226900001701243900001601260900001801276900001901294KSI00054006820080422154206060726s2003    ulk           000   kor    a0110010 akorbeng01a569.205b한597ㅈㄱc16(1)-16(4)00aAg/AsGeSeS 다층박막의 광유기 이방성(PA) 특성=xCharacteristics of the photoinduced anisotropy(PA) in Ag/AsGeSeS multilayer thin films/d여철호,e나선웅,e신경,e박정일,e정홍배  ap. 144-150;c26 cm  a여철호, 광운대학교 전자재료공학과  a나선웅, 광운대학교 전자재료공학과  a신경, 광운대학교 전자재료공학과  a박정일, 광운대학교 전자재료공학과  a정홍배, 광운대학교 전자재료공학과  aPhotoinduced anisotropyaLinear dichroismaAg polarized-photodopingaAg/A<TEX>$$s_{40}$$</TEX>G<TEX>$$e_{10}$$</TEX>S<TEX>$$e_{15}$$</TEX><TEX>$$S_{35}$$</TEX> multilayeraAg/A<TEX>$$s_{40}$$</TEX>G<TEX>$$e_{10}$$</TEX>S<TEX>$$e_{15}$$</TEX><TEX>$$S_{35}$$</TEX>1 a여철호0KAC2018J64814aut1 a나선웅0KAC2018K81241 a신경,g辛坰0KAC2018H23001 a박정일1 a정홍배,g鄭鴻倍,d1951-0KAC2017015010 t전기전자재료학회 논문지.d한국전기전자재료학회.gVol.16 no.2(2003년 2월), p. 144-150q16:2<144w(011001)KSE199800338,x1226-794540u40040497aKd00010aYeo, Cheolho10aNa, Sunwoong10aShin, Kyung10aPark, Jeongil10aChung, Hongbay