01295nam a2200277 c 4500001001300000005001500013008004100028040001100069041001300080052002300093245024300116300002200359545009900381545007300480545009000553653006300643700005300706700001400759700001400773700001400787773014900801900001800950900001600968900001500984900001800999KSI00053647420060726150817060721s1998    ulk           000   kor    a0110010 akorbeng01a405b국374ㄱc1700aExcimer laser annealing을 할 때 결정질과 비정질의 계면에서의 특성연구=xInterface properties of crystalline and amorphous phase during the excimer laser annealing process/d이창우,e오환원,e이효석,e고석중  ap. 95-106;c26 cm  a이창우, 국민대학교 자연과학대학 물리학과 조교수bcwlee@phys.kookmin.ac.kr  a오환원, 국민대학교 자연과학대학 물리학과 조교수  a이효석, Semiconductor Device Laboratory, Korea Institute of Science and technology  a결정질a비정질aExcimer laser annealingaCrystalline1 a이창우,g李昶雨,d1964-0KAC2018055094aut1 a오환원1 a이효석1 a고석중0 t(基礎科學硏究所)論文集-國民大學校.d國民大學校出版部.g17輯(1998年), p. 95-106q17<95w(011001)KSE199500678,x1226-000210aLee, Changwoo10aOh, Hwanwon10aYi, Hyosuk10aGho, Seokjung