01195nam a2200289 c 4500001001300000005001500013008004100028040001100069041001300080052002800093245016200121300002100283545003800304545003800342545003800380545004700418653009800465700001900563700004800582700001400630700001400644773016900658900001800827900002600845900001600871900001800887KSI00018566120040524195853040504s1999    ulk           000   kor    a0110010 akorbeng01a469.05b한428ㅎc9(1)00a실리콘 웨이퍼에서의 산소석출 거동 해석=xStudy on oxygen precipitation behavior in Si wafers/d이보영,e황돈하,e유학도,e권오종  ap. 84-88;c29 cm  a이보영, LG 실트론 연구소  a황돈하, LG 실트론 연구소  a유학도, LG 실트론 연구소  a권오종, 경북대학교 금속공학과  a실리콘a웨이퍼a산소석출 거동aOxygen precipitation behavioraSiliconaSiaWafers1 a이보영4aut1 a황돈하,g黃敦夏,d1969-0KAC2017020911 a유학도1 a권오종0 tJournal of the Korean crystal growth and crystal technology.d韓國結晶成長學會.g9권 1호(1999년 2월), p. 84-88q9:1<84w(011001)KSE199508766,x1225-142910aLee, Bo-Young10aHwang, Don-Ha,d1969-10aYoo, Hak-Do10aKwon, Oh-Jong