01682nam a2200361 c 4500001001300000005001500013008004100028040001100069041001300080052002800093245029200121300002100413545005200434545005200486545005100538545005100589545007100640545007000711653016000781700002000941700001500961700001400976700004800990700001501038700001401053773016901067900001401236900001401250900001401264900001401278900001401292900001401306 KSI000185432 20040524195849 040504s1999 ulk 000 eng a011001 0 aeng bkor 01 a469.05 b한428ㅎ c9(1) 00 aFabrication of C$$r^{3+}$$ doped sapphire single crystal by high temperature and pressure acceleration method= x고온가압 확산법에 의한 C$$r^{3+}$$ 고용 사파이어 단결정의 제조/ dE.S. Choi, eC.H. Jung, eM.K. Kim, eH.T. Kim, eJ.Y. Hong, eY.T. Kim ap. 29-33; c29 cm aE.S. Choi, Institute of Ceramic Technology,NITQ aC.H. Jung, Institute of Ceramic Technology,NITQ aM.K. Kim, Institute of Ceramic Technology,NITQ aH.T. Kim, Institute of Ceramic Technology,NITQ aJ.Y. Hong, Department of Materials Engineering, Kyonggi University aY.T. Kim, Department of Materials Engineering, Kyonggi University aC$$r^{3+}$$ aSapphire aSingle crystal aHigh temperature and pressure acceleration method a고온가압 확산법 a고용 사파이어 a단결정 1 aChoi, E.S. 4aut 1 aJung, C.H. 1 aKim, M.K. 1 a김형태, g金亨泰, d1961- 0KAC201845354 1 aHong, J.Y. 1 aKim, Y.T. 0 tJournal of the Korean crystal growth and crystal technology. d韓國結晶成長學會. g9권 1호(1999년 2월), p. 29-33 q9:1<29 w(011001)KSE199508766, x1225-1429 10 a최의석 10 a정충호 10 a김무경 10 aKim, H.T. 10 a홍정유 10 a김유택