01109nam a2200217 c 4500001001300000005001500013008004100028040001100069041001300080052002900093245021500122300002300337545006300360545005300423653011200476700005300588700003600641773017800677900001700855900001900872KSI00018506220040521195844040504s2000    ulk           000   kor    a0110010 akorbeng01a469.05b한428ㅎc10(6)00aP<TEX>$$b_x$$</TEX>T<TEX>$$i_{1-x}$$</TEX>O₂(x＝0.1)박막의 제조 및 특성=xPreparatnion and characteristics of P<TEX>$$b_x$$</TEX>T<TEX>$$i_{1-x}$$</TEX>O₂(x＝0.1) thin film/d김상수,e권식철  ap. 418-424;c29 cm  a김상수, 창원대학교 자연과학대학 물리학과  a권식철, 한국기계연구원 표면기술부  aP<TEX>$$b_x$$</TEX>T<TEX>$$i_{1-x}$$</TEX>O₂a박막a제조aPreparatnion and characteristicsathin film1 a김상수,g金祥洙,d1951-0KAC2018178774aut1 a권식철,d1951-0KAC2016187860 tJournal of the Korean crystal growth and crystal technology.d韓國結晶成長物學會.g10권 6호(2000년 12월), p. 418-424q10:6<418w(011001)KSE199508766,x1225-142910aKim, Sang-Su10aKwon, Sik-Chol