01221nam a2200289 c 4500001001300000005001500013008004100028040001100069041001300080052002800093245018800121300002300309545003800332545003800370545003800408545004700446653009200493700001900585700004800604700001400652700001400666773017300680900001800853900002600871900001600897900001800913KSI00018470320040520195837040503s1998    ulk           000   kor    a0110010 akorbeng01a469.05b한428ㅎc8(4)00a실리콘 단결정내의 grown-in 결함 분포에 관한 고찰=xInvestigation of grown-in defects distribution in Si single crystal/d이보영,e황돈하,e유학도,e권오종  ap. 539-543;c29 cm  a이보영, LG 실트론 연구소  a황돈하, LG 실트론 연구소  a유학도, LG 실트론 연구소  a권오종, 경북대학교 금속공학과  aGrown-ina실리콘a단결정a결함 분포aDefects distributionaSiaSingle crystal1 a이보영4aut1 a황돈하,g黃敦夏,d1969-0KAC2017020911 a유학도1 a권오종0 tJournal of the Korean crystal growth and crystal technology.d韓國結晶成長學會.g8권 4호(1998년 11월), p. 539-543q8:4<539w(011001)KSE199508766,x1225-142910aLee, Bo-Young10aHwang, Don-Ha,d1969-10aYoo, Hak-Do10aKwon, Oh-Jong