01443nam a2200337 c 4500001001300000005001500013008004100028040001100069041001300080052002800093245022300121246003800344300002300382545005000405545003700455545003400492545005000526545005000576653011200626700001900738700001400757700001100771700004800782700001400830773017200844900001701016900002001033900001601053900001901069900001701088KSI00018463820090417142005040503s1997    ulk           000   kor    a0110010 akorbeng01a469.05b한428ㅎc7(2)00a승화법에 의한 6H-SiC 단결정 성장n2,p내부 결함 해석=x6H-SiC single crystal growth by the sublimation method, (the)analysis of internal defects/d김화목,e강승민,e주경,e심광보,e오근호30a(the)analysis of internal defects  ap. 191-196;c29 cm  a김화목, 한양대학교 세라믹공학과  a강승민, 영도기술연구소  a주경, 영도기술연구소  a심광보, 한양대학교 세라믹공학과  a오근호, 한양대학교 세라믹공학과  a승화법a6H-SiCa단결정aSingle crystalaSublimation methoda내부결함aAnalysis of internal defect1 a김화목4aut1 a강승민1 a주경1 a심광보,g沈光輔,d1960-0KAC2017025131 a오근호0 tJournal of the Korean crystal growth and crystal technology.d韓國結晶成長學會.g7권 2호(1997년 5월), p. 191-196q7:2<191w(011001)KSE199508766,x1225-142910aKim, Hwa Mok10aKang, Seung Min10aJoo, Kyoung10aShim, Kwang Bo10aAuh, Keun Ho