01118na  a2200229   4500001001300000005001500013008004100028040001100069041001300080052002300093245023200116300002300348653020100371700005300572700001400625700004800639773012400687856002100811900001800832900002000850900001800870KSI00003796420040205103802031103s2002    tgk           000   kor    a0110010 akorbeng01a569.805b한536ㅅ00aHot wall epitaxy 법에 의한 CdIn₂S₄ 단결정 박막의 성장과 광전류 특성=xGrowth and photocurrent properties of CdIn₂S₄/GaAs single crystal thin film by hot wall epitaxy/d이상열,e홍광준,e박진성  ap. 309-318;c26 cm  aHot wall epitaxyaCdIn₂S₄a단결정 박막a광전류aPhotocurrentaGaAsaSingle crystal thin filmaCdIn₂S₄/GaAsaHall effectaCrystal field splittingaSpin-orbit splittingaExction peak1 a이상열,g李相烈,d1949-0KAC2018192814aut1 a홍광준1 a박진성,g朴珍成,d1962-0KAC2012095080 t센서학회지.d한국센서학회.g11권 5호(2002년 9월), p. 309-318q11:5<309w(011001)KSE199508532,x1225-547540u30005531aKd00010aLee, Sangyoul10aHong, Kwangjoon10aPark, Jinsung