01084na  a2200229   4500001001300000005001500013008004100028040001100069041001300080052002300093245022300116300002100339545005000360545004400410653013100454700004100585700004800626773012100674856002000795900001800815900002100833KSI00003741420040205103751031103s2002    tgk           000   kor    a0110010 akorbeng01a569.805b한536ㅅ00a후열처리 온도에 따른 ZnGa₂0₄ 형광체 박막의 발광 특성=xPhotoluminescence characteristics of the ZnGa₂0₄ phosphor thin films as a function of post-annealing temperature/d이성수,e정중현  ap. 60-65;c26 cm  a이성수, 신라대학교 광전자공학과  a정중현, 부경대학교 물리학과  a후열처리 온도aZnGa₂0₄a형광체 박막aPhosphor thin filmsaPost-annealing temperaturea발광aPhotoluminescence1 a이성수,d1964-0KAC2018353324aut1 a정중현,g鄭仲鉉,d1954-0KAC2017130300 t센서학회지.d한국센서학회.g11권 1호(2002년 1월), p. 60-65q11:1<60w(011001)KSE199508532,x1225-547540u3316686aKd00010aYi, Soung Soo10aJeong, Jung Hyun