01767nam a2200361 c 4500001001300000005001500013008004100028040001100069041001300080052002400093245035300117300003200470545008900502545005000591545006500641545006500706545006500771545006500836653013300901700001901034700001401053700004801067700004801115700001401163700001401177773013101191900001201322900001301334900001501347900001401362900001401376900001501390KSI00016313820040127194256031216s2002    ulka          000   kor    a0110010 akorbeng01a554.9405b한622ㅎ00a다양한 반도체-유전체 덮개층 조합을 이용한 InGaAs/InGaAsP 양자우물의 무질서화=xDielectric cap quantum well disordering for band gap tuning of InGaAs/InGaAsP quantum well structure using various combinations of semiconductor-dielectric capping layers/d조재원,e이희택,e최원준,e우덕하,e김선호,e강광남  ap. 207-211:b삽도;c26 cm  a조재원, 광운대학교 전자물리학과bE-mail: surface@daisy.kwangwoon.ac.kr  a이희택, 광운대학교 전자물리학과  a최원준, 한국과학기술연구원 광기술연구센터  a우덕하, 한국과학기술연구원 광기술연구센터  a김선호, 한국과학기술연구원 광기술연구센터  a강광남, 한국과학기술연구원 광기술연구센터  a반도체-유전체a덮개층조합aInGaAs/InGaAsP양자우물aSemiconductor-dielectricaVarious combinationsaCapping layers1 a조재원4aut1 a이희택1 a최원준,g崔原準,d1964-0KAC2017357741 a우덕하,g禹德夏,d1963-0KAC2017004461 a김선호1 a강광남0 t韓國眞空學會誌.d韓國眞空學會.g11권 4호(2002년 12월), p. 207-211q11:4<207w(011001)KSE199508370,x1225-882210aCho, J.10aYi, H.T.10aChoi, W.J.10aWoo, D.H.10aKim, S.H.10aKang, K.N.