01043nam a2200217 c 4500001001300000005001500013008004100028040001100069041001300080052003000093245019600123300003200319545004700351545004700398653014600445700001900591700004800610773012800658900002000786900001900806KSI00016082020040219194236031216s1998    ulka          000   kor    a0110010 akorbeng01a554.9405b한622ㅎc7(1)00a플라즈마 후처리 시간에 따른 저유전율 SiOF 박막의 특성=xCharacteristics of low dielectric constant SiOF thin films with post plasma treatment time/d이석형,e박종완  ap. 267-272:b삽도;c26 cm  a이석형, 한양대학교 금속공학과  a박종완, 한양대학교 금속공학과  a플라즈마a후처리a시간a저유전율aSiOFa박막aCharacteristicsaLowaDielectricaConstantaFilmsaPostaPlasmaaTreatmentaTime1 a이석형4aut1 a박종완,g朴鍾完,d1948-0KAC2017206430 t韓國眞空學會誌.d韓國眞空學會.g7권 3호(1998년 8월), p. 267-272q7:3<267w(011001)KSE199508370,x1225-882210aLee, Seoghyeong10aPark, Jong-Wan