01128nam a2200229 c 4500001001300000005001500013008004100028040001100069041001300080052002500093245017900118300002900297545006000326545006000386653017400446700005300620700004800673773011800721856002000839900001900859900002000878KSI00008646920031226175948031125s1984    tgka          000   kor    a0110010 akorbeng01a569.05b경181ㅈc500a비균질, 이방성 반도체의 자전효과해석=xTheoretical analysis of galvanomagnetic effects in inhomogeneous and anisotropic semiconductors/d李種玄,e辛長奎  ap. 1-12:b삽도;c26 cm  a이종현, 경북대학교 공과대학 전자공학과  a신장규, 경북대학교 공과대학 전자공학과  a비균질a비균질 이방성a이방성a이방성 반도체a반도체a자전a자전효과aTheoreticalaGalvanomagneticaInhomogeneousaAnisotropicaSemiconductors1 a이종현,g李鍾玄,d1949-0KAC2018164644aut1 a신장규,g辛長奎,d1956-0KAC2016304860 t電子技術硏究誌.d慶北大學校 出版部.g5권(1984년), p. 1-12q5<1w(011001)KSE199504020,x1225-214X40u3282950aKd00010aLee, Jong-Hyun10aShin, Jang-Kyoo