00967nam a2200229 c 4500001001300000005001500013008004100028040001100069041001300080052002800093245013700121300003000258545006400288545006400352545002600416653005200442700001900494700004800513773013900561900001900700900001800719KSI00016131120040212183937031216s1994    ulka          000   kor    a0110010 akorbeng01a569.05b대483c31(1.9)00aGaAs 및 AlGaAs 완충층을 이용한 GaAs MESFET 제작=xGaAs MESFETs using GaAs and AlGaAs buffer layers/d郭東華,e李熙哲  ap. 38-43:b삽도;c26 cm  a곽동화, 한국과학기술원 전기 및 전자공학과  a이희철, 한국과학기술원 전기 및 전자공학과  aKwak, Dong-Hwa, KAIST  aGaAsaAlGaAsa완충층aMESFETaBufferaLayers1 a곽동화4aut1 a이희철,g李禧哲,d1973-0KAC2017399100 t電子工學會論文誌. A.d大韓電子工學會.g31卷 12號(1994년 12월), p. 38-43q31:12<38w(011001)KSE199508730,x1016-135X10aKwak, Dong Hwa10aLee, Hee Chul