01240na  a2200253   4500001001300000005001500013008004100028040001100069041001300080052003900093245020700132300003200339545004400371545006900415545004700484653012800531700001900659700004800678700004800726773015500774900002000929900001900949900001800968KSI00005446120040207083333031010s2001    ulka          000   kor    a0110011 akorbeng01a569.205b한597ㅈㄱc14(5)-14(8)00aHot wall epitaxy(HWE)법에 의한 CuInSe₂ 단결정 박막 성장과 특성=xGrowth and characterization of CuInSe₂ single crystal thin film by hot wall epitaxy/d홍광준,e이상열,e박진성  ap. 445-454:b삽도;c26 cm  a홍광준, 조선대학교 물리학과  a이상열, 조선대학교 물리학과bsylee@mail.chosun.ac.kr  a박진성, 조선대학교 재료공학과  a단결정a박막aHot wall epitaxyaHWEaCuInSe₂aSingle crystal thin filmaHall effectaPhotocurrentaPhotoluminescence1 a홍광준4aut1 a이상열,g李相烈,d1949-0KAC2018192811 a박진성,g朴珍成,d1962-0KAC2012095080 t전기전자재료학회논문지.d한국전기전자재료학회.gVol.14 no.6(2001년 6월), p. 445-454q14:6<445w(011001)KSE199800338,x1226-794510aHong, Kwangjoon10aLee, Sang youl10aPark, Jinsung