01356nam a2200289 c 4500001001300000005001500013008004100028040001100069041001300080052003900093245020800132300003200340545008400372545006400456545006400520545006400584653010400648700004100752700001400793700001400807700001400821773015500835900002000990900001801010900001901028900001901047KSI00005443220040207083329031010s2001    ulka          000   kor    a0110011 akorbeng01a569.205b한597ㅈㄱc14(1)-14(4)00aLPE 성장법으로 성장시킨 La 을 첨가한 YIG 막의 자성특성=xMagnetic properties of La-doped YIG films prepared by LPE(liquid phase epitaxy)/d김동영,e한진우,e김명수,e이상석  ap. 257-262:b삽도;c26 cm  a김동영, 한국전자통신연구원 세라믹RF부품팀bkimdyey@etri.re.kr  a한진우, 한국전자통신연구원 세라믹RF부품팀  a김명수, 한국전자통신연구원 세라믹RF부품팀  a이상석, 한국전자통신연구원 세라믹RF부품팀  a성장법a자성특성aLPEaLiquid phase epitaxyaYIGaFerromagnetic linewidthaLattice parameter1 a김동영,d1967-0KAC2018521694aut1 a한진우1 a김명수1 a이상석0 t전기전자재료학회논문지.d한국전기전자재료학회.gVol.14 no.3(2001년 3월), p. 257-262q14:3<257w(011001)KSE199800338,x1226-794510aKim, Dong-Young10aHahn, Jin-Woo10aKim, Meyng-Soo10aLee, Sang-Seok