01730nam a2200325 c 4500001001300000005001500013008004100028040001100069041001300080052003900093245030300132300003200435545009300467545007100560545007100631545005300702545007100755653013900826700005300965700004801018700001401066700003601080700003601116773015501152900002001307900001901327900001801346900002001364900002001384KSI00005424420040114083303031010s2000    ulka          000   kor    a0110010 akorbeng01a569.205b한597ㅈㄱc13(1)-13(4)00a자연 산화물 분산 촉진에 의한 실 시간 인 도핑 실리콘의 고품질 에피택셜 저온 성장=xHigh-quality epitaxial low temperature growth of in situ phosphorus-doped Si films by promoting dispersion of native oxides/d김홍승,e심규환,e이승윤,e이정용,e강진영  ap. 125-130:b삽도;c26 cm  a김홍승, 한국전자통신연구원 회로소자기술연구소bhongseung@etri.re.kr  a심규환, 한국전자통신연구원 회로소자기술연구소  a이승윤, 한국전자통신연구원 회로소자기술연구소  a이정용, 한국과학기술원 재료공학과  a강진영, 한국전자통신연구원 회로소자기술연구소  a산화물a실리콘aEpitaxial growthaSiliconaReduced pressure chemical vapor depositionaTwo step growthaDispersionaNative oxide1 a김홍승,g金泓承,d1968-0KAC2017045094aut1 a심규환,g沈揆煥,d1961-0KAC2017060791 a이승윤1 a이정용,d1951-0KAC2013292771 a강진영,d1953-0KAC2018494800 t전기전자재료학회논문지.d한국전기전자재료학회.gVol.13 no.2(2000년 2월), p. 125-130q13:2<125w(011001)KSE199800338,x1226-794510aKim, Hong-Seung10aShim, Kyu-Hwan10aLee Seung-Yun10aLee, Jeong-Yong10aKang, Jin-Young