01305na  a2200241   4500001001300000005001500013008004100028040001100069041001300080052003300093245018300126300003200309545008100341545005300422545008300475653022700558700001900785700004800804700001700852773015500869900001901024900002001043KSI00005406920040206083239031010s1999    ulka          000   kor    a0110010 akorbeng01a569.205b한597ㅈㄱc12(1)00aMOD 법에 의해 제조된 SBT 강유전 박막의 전기적 특성=xElectrical properties of SBT ferroelectric thin films prepared by MOD/d천재일,e김정석,eD. L. Kwong  ap. 151-157:b삽도;c26 cm  a천재일, 호서대학교 재료화학공학부bcicheon@dogsur.hoseo.ac.kr  a김정석, 호서대학교 재료화학공학부  aD. L. Kwong, Microelectronic Research Center University of Texas at Austin USA  a강유전박막aSBTa열처리온도a결정화a미세구조a전기적 성질aSrBi₂Ta₂<TEX>$$O_9$$</TEX>aFerroelectric thin filmsaMODaAnnealing temperatureaCrystallizationaMicrostructureaElectrical properties1 a천재일4aut1 a김정석,g金鼎奭,d1957-0KAC2018261721 aKwong, D. L.0 t전기전자재료학회논문지.d한국전기전자재료학회.gVol.12 no.2(1999년 2월), p. 151-157q12:2<151w(011001)KSE199800338,x1226-794510aCheon, Chae-Il10aKim, Jeong-Seog