01185nam a2200229 c 4500001001300000005001500013008004100028040001100069041001300080052003300093245022100126300003200347545008200379545005700461653016100518700001800679700005300697700001900750773015800769900001400927900001400941KSI00005402520040114083233031010s1998    ulka          000   eng    a0110010 aengbkor01a569.205b한597ㅈㄱc11(7)00aDielectric properties of PZT(20/80)/PZT(80/20) heterolayered thin films prepared by sol-gel technique=xSol-gel법으로 제조한 PZT(20/80)/PZT(80/20) 이종층 박막의 유전특성/dSung-Gap Lee,eYoung-Hie Lee  ap. 990-995:b삽도;c26 cm  aSung-Gap Lee, 서남대학교 전자전기공학과blsgap@tiger.seonam.ac.kr  aYoung-Hie Lee, 광운대학교 전자재료공학과  a이종층박막a유전특성aPZT heterolayered thin filmsaSol-gel methodaNucleation siteaDielectric constantaFatigue propertyaLeakage current density1 aLee, Sung-Gap1 a이성갑,g李成甲,d1963-0KAC2018355594aut1 aLee, Young-Hie0 t전기전자재료학회논문지.d한국전기전자재료학회.gVol.11 no.11(1998년 11월), p. 990-995q11:11<990w(011001)KSE199800338,x1226-794510a이성갑10a이영희