01141nam a2200217 c 4500001001300000005001500013008004100028040001100069041001300080052003300093245026100126300003200387545005100419545008200470653010900552700005300661700001400714773015500728900002000883900002000903KSI00005398620040205083227031010s1998 ulka 000 kor  a0110010 akorbeng01a569.205b한597ㅈㄱc11(7)00a평면도파로형 광증폭기 제작을 위한 E$$r^+$$ 이 첨가된 SiO₂ 박막 특성=x(The)characteristics of E$$r^+$$ doped SiO₂ thin film for the fabrication of the planar light waveguide amplifier/d최영복,e문동찬 ap. 739-745:b삽도;c26 cm a최영복, 한국통신 가입자망 연구소 a문동찬, 광운대학교 전자재료공학과bcompl@daisy.kwangwoon.ac.kr a광증폭기aSiO₂박막aE$$r^+$$ doped SiO₂ thin filmaPlanar light waveguide amplifier1 a최영복,g崔永福,d1959-0KAC2017021824aut1 a문동찬0 t전기전자재료학회논문지.d한국전기전자재료학회.gVol.11 no.9(1998년 9월), p. 739-745q11:9<739w(011001)KSE199800338,x1226-794510aChoi, Young-Bok10aMoon, Dong-Chan