01467na  a2200289   4500001001300000005001500013008004100028040001100069041001300080052003300093245025700126300003200383545007800415545004700493545004500540545004700585653015400632700005300786700003600839700001800875700005200893773015500945900002101100900001801121900001801139900002001157KSI00005395620040205083223031010s1998    ulka          000   kor    a0110010 akorbeng01a569.205b한597ㅈㄱc11(7)00aSol-Gel 법으로 제작된 PLZT 박막의 Zr/Ti 비에 따른 구조특성에 관한 연구=x(A)Study on the structural characteristics of PLZT thin films with Zr/Ti ratios prepared by sol-gel method/d최형욱,e장낙원,eJ. Dougherty,e박창엽  ap. 535-540:b삽도;c26 cm  a최형욱, 경원대학교 전기전자공학부bchw@main.kyungwon.ac.kr  a장낙원, 연세대학교 전기공학과  aJ. Dougherty, MRL, The Penn. State Univ.  a박창엽, 연세대학교 전기공학과  aPLZT박막a구조특성a졸-겔법a급속 열처리a라만분광법aPLZT thin filmaSol-gel processaRapid thermal annealingaRaman spectroscopy1 a최형욱,g崔炯煜,d1964-0KAC2018M10954aut1 a장낙원,d1967-0KAC2017069811 aDougherty, J.1 a박창엽,g朴昌燁,d1935-20230KAC2013074120 t전기전자재료학회논문지.d한국전기전자재료학회.gVol.11 no.7(1998년 7월), p. 535-540q11:7<535w(011001)KSE199800338,x1226-794510aChoi, Hyung-Wook10aJang, Nak-Won10aDougherty, J.10aPark, Chang-Yub