01389nam a2200253 c 4500001001300000005001500013008004100028040001100069041001300080052003300093245034700126300003200473545009100505545005000596545006000646653013500706700001900841700001400860700004800874773015500922900001901077900001901096900002001115KSI00005392120040114083218031010s1998 ulka 000 kor  a0110010 akorbeng01a569.205b한597ㅈㄱc11(4)00aT$$e_x$$(S$$b_{85}$$G$$e_{15}$$$$)_{100-x}$$ 상변화 광기록 박막의 결정화 특성=xCrystallization properties of T$$e_x$$(S$$b_{85}$$G$$e_{15}$$$$)_{100-x}$$ thin film as phase change optical recording media/d김홍석,e이현용,e정홍배 ap. 314-320:b삽도;c26 cm a김홍석, 광운대학교 공대 전자재료공학과bhbchung@daisy.kwangwoon.ac.kr a이현용, 광운대학교 신기술연구소 a정홍배, 광운대학교 공대 전자재료공학과 a광기록a박막a반사도a상변화a결정화a소거aReflectanceaPhase changeaOptical recordingaCrystallizationaErasing1 a김홍석4aut1 a이현용1 a정홍배,g鄭鴻倍,d1951-0KAC2017015010 t전기전자재료학회논문지.d한국전기전자재료학회.gVol.11 no.4(1998년 4월), p. 314-320q11:4<314w(011001)KSE199800338,x1226-794510aKim, Hong-Seok10aLee, Hyun-Yong10aChung, Hong-Bay