01264nam a2200229 c 4500001001300000005001500013008004100028040001100069041001300080052002900093245026100122300003200383545006100415545006100476653024800537700003600785700001900821773013700840856002000977900001800997900001901015KSI00007967620040221113928031124s1997    uska          000   kor    a0110010 akorbeng01a530.05b울239ㄱc28(1)00a플라즈마 화학증착법으로 제조한 붕소를 도핑한 수소화된 비정질 실리콘 박막의 특성=xCharacterization of B-doped hydrogenated amorphous silicon films grown by plasma-enhanced chemical-vapor deposition/d정우철,e이재신  ap. 159-170:b삽도;c26 cm  a정우철, 울산대학교 재료공학·금속공학부  a이재신, 울산대학교 재료공학·금속공학부  a플라즈마a화학증착법a붕소a도핑a수소화a비정질a실리콘박막aB-dopedaPlasma-enhancedaChemical-vaporaCharacterizationaBdopedaHydrogenatedaAmorphousaSiliconaFilmsaGrownaPlasmaenhancedaChemicalvaporaDeposition1 a이재신,d1961-0KAC2018477541 a정우철4aut0 t공학연구논문집.d울산대학교 출판부.g28권 1호(1997년 6월), p. 159-170q28:1<159w(011001)KSE199501988,x1225-363440u2073207aKd00210aLee, Jae Shin10aJung, Woo Chul