01291nam a2200253 c 4500001001300000005001500013008004100028040001100069041001300080052002900093245027300122300003200395545004700427545007000474545004700544653013300591700001900724700004800743700004800791773014200839900001800981900002000999900001801019KSI00004688920040202152742031010s2000    ulka          000   kor    a0110010 akorbeng01a569.05b한611ㅎc11(6)00a측정된 S-파라미터에서 MESFET과 HEMT의 기생 저항을 구하는 새로운 방법=x(A)new method for determination the parasitic extrinsic resistances of MESFETs and HEMTs from the measured S-parameters under active bias/d임종식,e김병성,e남상욱  ap. 876-885:b삽도;c26 cm  a임종식, 서울대학교 전기공학부  a김병성, 성균관대학교 전기전자 및 컴퓨터공학부  a남상욱, 서울대학교 전기공학부  a전자파aS-파라미터aMESFETaHEMTa기생저항aDeteminationaParasiticaExtrinsic resistancesaS-parametersaActive bias1 a임종식4aut1 a김병성,g金炳成,d1965-0KAC2018338311 a남상욱,g南相郁,d1959-0KAC2018267490 t韓國電磁波學會論文誌.d韓國電磁波學會.g11권 6호(2000년 9월), p. 876-885q11:6<876w(011001)KSE199701049,x1226-313310aLim, Jong-Sik10aKim, Byung-Sung10aNam, Sangwook