01078nam a2200229 c 4500001001300000005001500013008004100028040001100069041001300080052003100093245020600124300003000330545004700360545004700407653012900454700005300583700001400636773015000650856002000800900001400820900001400834KSI00007725320040128094016031122s1995 tjka 000 kor  a0110010 akorbeng01a530.05b충69ㄴㅁc10(1)00aX선 회절에 의한 SiO₂/Si 및 poly-Si/SiO₂/Si계면의 응력측정 분석=xStress analysis of SiO₂/Si and poly-Si/SiO₂/Si interfaces by X-ray diffraction technique/d임규홍,e김도진 ap. 12-19:b삽도;c26 cm a임규홍, 충남대학교 재료공학과 a김도진, 충남대학교 재료공학과 aX선 회절aSiO₂aSiaPoly Si 계면a응력a응력측정a측정aX-rayaStressaInterfacesaXray diffraction technique1 a김도진,g金道鎭,d1956-0KAC2017330204aut1 a임규홍0 t論文集-忠南大學校 産業技術硏究所.d忠南大學校.g10卷 1號(1995년 6월), p. 12-19q10:1<12w(011001)KSE199500018,x1229-500040u1993020aKd00210aKim, D.J.10aLim, K.H.