00786nam2a22001817a 4500001001500000005001500015008004100030040001900071049003000090052002000120100004800140245014700188260002700335300002600362502006700388653012500455900002400580WDM000005211  20240605094639931217s1990    xx a          000d  eng    a011001c0110010 lWM156377lWM156378c2fDP02a621.38152bY59h1 a윤의준,g尹義埈,d1960-0KAC20120831710aHeteroepitaxy of GaAs by Metal-organic chemical vapor deposition on low-temperature (450-650 C) plasma-cleaned Si Substrates/dby Euijoon Yoon  aCambridge:bMIT,c1990  a174 p.:bill.;c28 cm1 aThesis(Ph.D.) --bMassachusetts Institute of Technology,d1990  aHETEROEPITAXYaGAASaMETALORGANICaCHEMICALaVAPORaDEPOSITIONaLOWTEMPERATUREa450650aCaPLASMACLEANEDaSIaSUBSTRATES10aYoon, Uijun,d1960-